| PART |
Description |
Maker |
| ISL9K18120 ISL9K18120G3 |
18A, 1200V Stealth Dual Diode
18A 1200V Stealth Dual Diode
18A, 1200V Stealth⑩ Dual Diode
|
FAIRCHILD[Fairchild Semiconductor]
|
| STP36NE06FP STP36NE06 5994 |
N-Channel 60V-0.032Ω-36A- TO-220/TO-220FP STripFETTM Power MOSFET(N沟道功率MOSFET) N沟道60V的，0.032Ω- 36A条，TO-220/TO-220FP STripFETTM功率MOSFET（不适用沟道功率MOSFET的）
N - CHANNEL 60V - 0.032 - 36A - TO-220/TO-220FP STripFETTM POWER MOSFET
From old datasheet system
N - CHANNEL 60V - 0.032ohm - 36A - TO-220/TO-220FP STripFET POWER MOSFET
|
STMicroelectronics N.V.
STMICROELECTRONICS[STMicroelectronics]
|
| TD25F12KSB-A DT25F12KSB-A DT18F11KFB-K DT18F11KFC- |
Transient Voltage Suppressor Diodes
THYRISTOR MODULE|DOUBLER|CC|1.1KV V(RRM)|18A I(T)
THYRISTOR MODULE|DOUBLER|CC|1KV V(RRM)|18A I(T)
THYRISTOR MODULE|DOUBLER|CC|800V V(RRM)|18A I(T)
THYRISTOR MODULE|SCR|DUAL|CC|800V V(RRM)|25A I(T) 晶闸管模块|可控硅|双|消委会| 800V的五（无线资源管理）|5A我（翻译
THYRISTOR MODULE|DOUBLER|CC|1.2KV V(RRM)|18A I(T) 晶闸管模块|倍增|消委会| 1.2KV五（无线资源管理）| 18A条疙（T
THYRISTOR MODULE|DOUBLER|CC|1.1KV V(RRM)|25A I(T) 晶闸管模块|倍增|消委会| 1.1KV五（无线资源管理）|5A我（翻译
THYRISTOR MODULE|DOUBLER|CA|1.1KV V(RRM)|18A I(T) 晶闸管模块|倍增|加利福尼亚州| 1.1KV五（无线资源管理）| 18A条疙（T
THYRISTOR MODULE|DOUBLER|CA|800V V(RRM)|18A I(T) 晶闸管模块|倍增|加利福尼亚州| 800V的五（无线资源管理）| 18A条疙（T
THYRISTOR MODULE|DOUBLER|CA|1.1KV V(RRM)|25A I(T) 晶闸管模块|倍增|加利福尼亚州| 1.1KV五（无线资源管理）|5A我（翻译
THYRISTOR MODULE|DOUBLER|HALF-CNTLD|NEGATIVE|1.1KV V(RRM)|25A I(T) 晶闸管模块|倍增|半CNTLD |负| 1.1KV五（无线资源管理）|5A我（翻译
THYRISTOR MODULE|DOUBLER|CA|1.2KV V(RRM)|25A I(T) 晶闸管模块|倍增|加利福尼亚州| 1.2KV五（无线资源管理）|5A我（翻译
THYRISTOR MODULE|DOUBLER|CC|1KV V(RRM)|25A I(T) 晶闸管模块|倍增|消委会| 1KV交五（无线资源管理）|5A我（翻译
THYRISTOR MODULE|SCR|DUAL|CA|1.2KV V(RRM)|18A I(T) 晶闸管模块|可控硅|双|加利福尼亚州| 1.2KV五（无线资源管理）| 18A条疙（T
THYRISTOR MODULE|SCR|DUAL|CC|1.1KV V(RRM)|25A I(T) 晶闸管模块|可控硅|双|消委会| 1.1KV五（无线资源管理）|5A我（翻译
THYRISTOR MODULE|SCR DOUBLER|1.1KV V(RRM)|25A I(T) 晶闸管模块|可控硅倍增| 1.1KV五（无线资源管理）|5A我（翻译
|
HIROSE ELECTRIC Co., Ltd.
STMicroelectronics N.V.
L-com, Inc.
NXP Semiconductors N.V.
ITT, Corp.
IDEC, Corp.
Electronic Theatre Controls, Inc.
|
| FDMS9620S |
Dual N-Channel PowerTrenchMOSFET Q1: 30V, 16A, 21.5mQ2: 30V, 18A, 13m
|
Fairchild Semiconductor Corporation
|
| FDMC4435BZ |
P-Channel Power Trench? MOSFET -30V, -18A, 20.0mΩ
P-Channel Power Trench㈢ MOSFET -30V, -18A, 20.0mヘ
|
Fairchild Semiconductor
|
| FDD24AN06LA011 FDD24AN06L-F085 |
N-Channel Logic Level PowerTrench? MOSFET 60V, 36A, 24mΩ
|
Fairchild Semiconductor
|
| SSD40P0411 |
-36A , -40V , RDS(ON) 30m P-Ch Enhancement Mode Power MOSFET
|
SeCoS Halbleitertechnologie GmbH
|
| STP36NE06FP |
N - CHANNEL 60V - 0.032Q - 36A - TO-220/TO-220FP STripFET?/a> POWER MOSFET
|
New Jersey Semi-Conduct...
|
| 8534K912F27 8535K917G27 K317M27 K316J27 |
TOGGLE SWITCH, DPDT, MOMENTARY, 18A, 28VDC, PANEL MOUNT-THREADED
TOGGLE SWITCH, 4P3T, MOMENTARY, 18A, 28VDC, PANEL MOUNT-THREADED
TOGGLE SWITCH, DP3T, MOMENTARY, 18A, 28VDC, PANEL MOUNT-THREADED
|
EATON CORP
|
| IRF5Y31N20 |
200V Single N-Channel Hi-Rel MOSFET in a TO-257AA package
POWER MOSFET N-CHANNEL(Vdss=200V, Rds(on)=0.092ohm, Id=18A*)
|
IRF[International Rectifier]
|
| ISL9R18120G2NL ISL9R18120P2NL |
18A, 1200V Stealt Diode 18 A, 1200 V, SILICON, RECTIFIER DIODE, TO-247
18A, 1200V Stealth Diode 18 A, 1200 V, SILICON, RECTIFIER DIODE, TO-220AC
|
Fairchild Semiconductor, Corp.
|
| STP36NF03L |
N-CHANNEL 30V 0.015 OHM -36A TO-220 LOW GATE CHARGE STRIPFET POWER MOSFET
|
ST Microelectronics
|
